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nanoXCT-S100
Courtesy of
SLAC National Accelerator Laboratory

UltraXRM-S for Synchrotrons

Energy-tunable, Ultra-high Resolution 3D X-ray Microscopy For Synchrotron Facilities

The UltraXRM-S series harnesses the powerful X-ray beams produced by synchrotron radiation facilities for ultra-high resolution 3D X-ray microscopy. Combined with the superior X-ray imaging technology developed for the laboratory-based UltraXRM-L, the UltraXRM-S series is capable of producing 3D images with 30 nm resolution. The tunability of X-ray photon energies at synchrotron sources enables spectroscopic imaging for elemental contrast and chemical state mapping. Integrated Zernike phase contrast imaging enhances the visibility of internal edges and interfaces when absorption contrast is low. Xradia's proven technology delivers a sophisticated turnkey solution with the UltraXRM-S series, making it a must for any synchrotron facility developing a high-resolution X-ray imaging capability. Now also available in a low energy version with cryogenic sample handling for imaging of organic specimens in the water window (280 - 540 eV photon energy).

Applications:

  • Life Science Studies
  • Advanced Material Analysis
  • Oil & Gas Drilling Feasibility Models
  • Semiconductor Package FA

UltraXRM-S – Synchrotron
Energy-tunable, Ultra-high Resolution 3D X-ray Microscopy for Synchrotron Facilities

The revolutionary UltraXRM-S series marries Xradia's proprietary X-ray optics with the advanced X-ray source of a synchrotron radiation facility into an ultra-high resolution non-destructive 3D imaging solution. With currently available resolution to 30 nm, the UltraXRM-S series is providing insight into microscopic structures and processes previously not accessible with conventional X-ray imaging technology. The intrinsic capability of synchrotron sources to easily tune the X-ray energy enables the UltraXRM-S series to distinguish different elements in the 3D volume and collect spatially resolved absorption spectroscopy data. Incorporating multiple switchable configurations of X-ray optics, the UltraXRM-S series enables access to a wide range of accessible X-ray energies from typically 5 to 11 keV in the high energy configuration, and in the water window (280 0 540 eV) and beyond in the low energy configuration. The advanced reflective condenser technology developed by Xradia combined with bright second and third generation synchrotron X-ray sources enables fast, precise 3D X-ray imaging. The integrated Zemike phase contrast mode with an easy-to-use alignment concept allows visualization of samples with low X-ray absorption in the multi-keV photon energy range.

Benefits

  • Non-destructive 3D X-ray imaging
  • Ultra-high resolution to 30 nm
  • Elemental contrast and X-ray absorption spectroscopy at full spatial resolution
  • Short exposure times with second and third generation synchrotrons
  • Integrated Zernike phase contrast imaging (high energy version)
  • Cryogenic sample handling to minimize the effects of radiation damage for organic specimens (low energy version)
  • Cryogenic sample handling system with sample exchange robot
  • Visualization of 30 nm features

Applications

Life Science Research

Organelles, such as lysosomes, are clearly visible in the sub-cellular structure of stained cells, and features such as canalicular between osteocytic lacunae are clearly visible within slices of bone.

In the water window range of photon energies, internal features of cells exhibit natural contrast without staining.

Advanced Material Development

Variable configurations of the X-ray optics enable novel measurements such as X-ray absorption spectroscopy (XANES) for identification and segmentation of different materials within a sample.

Oil & Gas Drilling Feasibility Studies

The UltraXRM-S series offers a unique insight into oil & gas drilling feasibility studies through the visualization of rocks, providing input data for pore and flow modeling on the nano scale.

Semiconductor Package Failure Analysis

The UltraXRM-S series offers visualization of semiconductor samples and wafer-level packaging, such as integrated circuits and through-silicon vias, for defect investigation and failure analysis without the need for physical cross-sectioning.

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